GOODWORK SI2318

GOODWORK · FETs & Power MOSFETs · MPN SI2318

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Specifications

Gate Charge(Qg)4.7nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)33mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)420pF
TypeN-Channel

Technical details

N-Channel 40V 5A 1.56W Surface Mount SOT-23

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