GOODWORK SI2312

GOODWORK · FETs & Power MOSFETs · MPN SI2312

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)-
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)6A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)40mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)865pF

Technical details

N-Channel 20V 9A 0.35W Surface Mount SOT-23

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