GOODWORK · FETs & Power MOSFETs · MPN SI2309
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 8.2nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Output Capacitance(Coss) | 35pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 425pF |
| Type | P-Channel |
60V 2A 1.9V 1.56W 160mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS