GOODWORK SI2305

GOODWORK · FETs & Power MOSFETs · MPN SI2305

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Specifications

Gate Charge(Qg)8.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)33mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)830pF
TypeP-Channel

Technical details

P-Channel 20V 4.1A 1.3W Surface Mount SOT-23

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