GOODWORK SI2304DDS

GOODWORK · FETs & Power MOSFETs · MPN SI2304DDS

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Specifications

Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)3.1nC
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation278mW
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 N-channel
Input Capacitance(Ciss)245pF

Technical details

N-Channel 30V 3.5A 278mW Surface Mount SOT-23

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