GOODWORK SI2302T

GOODWORK · FETs & Power MOSFETs · MPN SI2302T

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Specifications

Output Capacitance(Coss)30pF
Pd - Power Dissipation960mW
Drain to Source Voltage20V
Gate Charge(Qg)3nC
Configuration-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)45mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)186pF

Technical details

960mW 20V 1V 45mΩ@4.5V 1 N-channel N-Channel SOT-523 Single FETs, MOSFETs RoHS

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