GOODWORK SI2301

GOODWORK · FETs & Power MOSFETs · MPN SI2301

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)10nC@4.5V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)92mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF
TypeP-Channel

Technical details

N-Channel 20V 3A 1.2W Surface Mount SOT-23

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