GOODWORK S33 SI2333

GOODWORK · FETs & Power MOSFETs · MPN S33 SI2333

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)21nC@4.5V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.1W
RDS(on)40mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)236pF
Number1 P-Channel
Input Capacitance(Ciss)1.275nF

Technical details

P-Channel 12V 6A 1.1W Surface Mount SOT-23

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