GOODWORK FDV303N-GK

GOODWORK · FETs & Power MOSFETs · MPN FDV303N-GK

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Specifications

Gate Charge(Qg)650pC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation715mW
Reverse Transfer Capacitance (Crss@Vds)5.4pF
RDS(on)270mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)37pF

Technical details

N-Channel 30V 1A 715mW Surface Mount SOT-23

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