GOODWORK BSS123W

GOODWORK · FETs & Power MOSFETs · MPN BSS123W

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Specifications

Gate Charge(Qg)1.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)3.8Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)29pF
TypeN-Channel

Technical details

100V 170mA 1.6V 350mW 3.8Ω@4.5V 1 N-channel N-Channel SOT-323 Single FETs, MOSFETs RoHS

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