GOODWORK 8N10

GOODWORK · FETs & Power MOSFETs · MPN 8N10

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage10V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)38pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)85mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)765pF

Technical details

10V 8A 1.5V 30W 85mΩ@10V 1 N-channel SOT-89 Single FETs, MOSFETs RoHS

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