GOODWORK 80N10

GOODWORK · FETs & Power MOSFETs · MPN 80N10

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Specifications

Gate Charge(Qg)25nC@50V
Drain to Source Voltage100V
Output Capacitance(Coss)548pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation104W
RDS(on)7.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-channel
Input Capacitance(Ciss)1.314nF

Technical details

100V 80A 1.7V 104W 7.2mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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