GOODWORK · FETs & Power MOSFETs · MPN 600R65F
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 13.5nC@10V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 32W |
| RDS(on) | 600mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 557pF |
N-Channel 650V 7A 32W Through Hole ITO-220AB