GOODWORK 5N10

GOODWORK · FETs & Power MOSFETs · MPN 5N10

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)206pF

Technical details

N-Channel 100V 5A 1.2W Surface Mount SOT-23

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