GOODWORK 2N5551

GOODWORK · Transistors (BJTs) · MPN 2N5551

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain80
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))150mV
Operating Temperature-55℃~+150℃

Technical details

160V 80 1 NPN NPN 600mA SOT-23 Single Bipolar Transistors RoHS

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