GOODWORK 2N10

GOODWORK · FETs & Power MOSFETs · MPN 2N10

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Specifications

Gate Charge(Qg)5.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)286mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)321pF
TypeN-Channel

Technical details

N-Channel 100V 2A 2.3W Surface Mount SOT-23

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