GOODWORK 20N65F

GOODWORK · FETs & Power MOSFETs · MPN 20N65F

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)80nC@10V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation167W
RDS(on)350mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)2.978nF

Technical details

N-Channel 650V 20A 167W Through Hole ITO-220F

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