GOODWORK · FETs & Power MOSFETs · MPN 20N65F
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 80nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 167W |
| RDS(on) | 350mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.978nF |
N-Channel 650V 20A 167W Through Hole ITO-220F