GOODWORK 20N50F

GOODWORK · FETs & Power MOSFETs · MPN 20N50F

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)465pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation38.5W
RDS(on)260mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)3.39nF
TypeN-Channel

Technical details

N-Channel 500V 20A 38.5W Through Hole ITO-220F

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