GOODWORK 16N65F

GOODWORK · FETs & Power MOSFETs · MPN 16N65F

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Specifications

Gate Charge(Qg)71nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)214pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation98W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.74nF
Type-

Technical details

N-Channel 650V 16A 98W Through Hole TO-220F

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