GOODWORK · FETs & Power MOSFETs · MPN 120N10
No reviews yet — be the first to review GOODWORK 120N10.
| Gate Charge(Qg) | 84nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 900pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 19.1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.797nF |
| Type | N-Channel |
100V 120A 4V 125W 3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS