GOODWORK · FETs & Power MOSFETs · MPN 10N65F
No reviews yet — be the first to review GOODWORK 10N65F.
| Gate Charge(Qg) | 57nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 215pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.04nF |
N-Channel 650V 10A 50W Through Hole ITO-220AB-3