GOODWORK 100N10

GOODWORK · FETs & Power MOSFETs · MPN 100N10

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Specifications

Gate Charge(Qg)34nC@75V
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)368pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation104W
RDS(on)5.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)5.9pF
Number1 N-channel
Input Capacitance(Ciss)2.36nF
TypeN-Channel

Technical details

100V 100A 1.7V 104W 5.9mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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