GOODWORK 100N03DF

GOODWORK · FETs & Power MOSFETs · MPN 100N03DF

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)330pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation62.5W
RDS(on)3.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)295pF
Number1 N-channel
Input Capacitance(Ciss)3.45nF
TypeN-Channel

Technical details

30V 100A 1.5V 62.5W 3.3mΩ@10V 1 N-channel N-Channel PDFN3x3 Single FETs, MOSFETs RoHS

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