GOFORD · FETs & Power MOSFETs · MPN GT950P06S
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| Output Capacitance(Coss) | 50pF |
|---|---|
| Pd - Power Dissipation | 2.5W |
| Gate Charge(Qg) | 5nC |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| RDS(on) | 90mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 300pF |
2.5W 60V 5.5A 1.4V 90mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS