GOFORD GT88N06T

GOFORD · FETs & Power MOSFETs · MPN GT88N06T

No reviews yet — be the first to review GOFORD GT88N06T.

Specifications

Gate Charge(Qg)23nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)293pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation100W
RDS(on)8.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)1.445nF
Vgs±20V

Technical details

N-Channel 60V 80A 100W Through Hole TO-220

Related FETs & Power MOSFETs