GOFORD GT880P15M

GOFORD · FETs & Power MOSFETs · MPN GT880P15M

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Specifications

Output Capacitance(Coss)145pF
Pd - Power Dissipation138W
Configuration-
Gate Charge(Qg)46nC
Drain to Source Voltage150V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)78mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.35nF

Technical details

138W 150V 30A 1.8V 78mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS

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