GOFORD · FETs & Power MOSFETs · MPN GT800N10I
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| Gate Charge(Qg) | 5nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.4A |
| Output Capacitance(Coss) | 70pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 67mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 210pF |
| Vgs | ±20V |
100V 3.4A 1.9V 1.7W 67mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS