GOFORD GT750P10M

GOFORD · FETs & Power MOSFETs · MPN GT750P10M

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Specifications

Gate Charge(Qg)29nC
Drain to Source Voltage100V
Output Capacitance(Coss)155pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)53mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.95nF
Vgs±20V

Technical details

P-Channel 100V 24A 79W Surface Mount TO-263

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