GOFORD GT750P08K

GOFORD · FETs & Power MOSFETs · MPN GT750P08K

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Specifications

Output Capacitance(Coss)169pF
Pd - Power Dissipation80W
Configuration-
Gate Charge(Qg)36nC
Drain to Source Voltage80V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)52mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.981nF

Technical details

P-Channel 80V 28A 80W Surface Mount TO-252

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