GOFORD · FETs & Power MOSFETs · MPN GT700P08T
No reviews yet — be the first to review GOFORD GT700P08T.
| Gate Charge(Qg) | 75nC |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 58mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.639nF |
| Vgs | ±20V |
P-Channel 80V 25A 125W Through Hole TO-220