GOFORD GT700P08S

GOFORD · FETs & Power MOSFETs · MPN GT700P08S

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Specifications

Gate Charge(Qg)75nC
Drain to Source Voltage80V
Output Capacitance(Coss)121pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.624nF
Vgs±20V

Technical details

P-Channel 80V 6.5A 3W Surface Mount SOP-8

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