GOFORD GT700P08D3

GOFORD · FETs & Power MOSFETs · MPN GT700P08D3

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Specifications

Gate Charge(Qg)75nC
Drain to Source Voltage80V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)57mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.591nF
Vgs±20V

Technical details

P-Channel 80V 16A 69W Surface Mount DFN(3x3)

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