GOFORD · FETs & Power MOSFETs · MPN GT6K2P10KH
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| Gate Charge(Qg) | 10nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 21pF |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 530mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 247pF |
| Vgs | ±20V |
P-Channel 100V 4.3A 25W Surface Mount TO-252