GOFORD · FETs & Power MOSFETs · MPN GT6K2P10IH
No reviews yet — be the first to review GOFORD GT6K2P10IH.
| Gate Charge(Qg) | 3.2nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 550mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 250pF |
| Vgs | ±20V |
P-Channel 100V 1A 1.4W Surface Mount SOT-23