GOFORD · FETs & Power MOSFETs · MPN GT650P20M
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| Gate Charge(Qg) | 116nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 320W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 51mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.9nF |
| Vgs | ±20V |
200V 50A 3.1V 320W 51mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS