GOFORD GT650N15K

GOFORD · FETs & Power MOSFETs · MPN GT650N15K

No reviews yet — be the first to review GOFORD GT650N15K.

Specifications

Drain to Source Voltage150V
Gate Charge(Qg)12nC
Output Capacitance(Coss)74.7pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation68W
RDS(on)59mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10.8pF
Number1 N-channel
Input Capacitance(Ciss)600pF
Vgs±20V

Technical details

N-Channel 150V 20A 68W Surface Mount TO-252

Related FETs & Power MOSFETs