GOFORD · FETs & Power MOSFETs · MPN GT60N12T
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| Gate Charge(Qg) | 39.6nC |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 356.1pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 140W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.3pF |
| RDS(on) | 10.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8097nF |
| Vgs | ±20V |
N-Channel 120V 6A 140W Through Hole TO-220