GOFORD · FETs & Power MOSFETs · MPN GT60N10
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| Gate Charge(Qg) | 37nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 75A |
| Output Capacitance(Coss) | 238pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 107W |
| RDS(on) | 7.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.785nF |
| Vgs | ±18V |
N-Channel 100V 75A 107W Through Hole TO-220