GOFORD GT600P15T

GOFORD · FETs & Power MOSFETs · MPN GT600P15T

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)58nC
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation185W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.95nF
Vgs±20V

Technical details

150V 45A 3.3V 185W 55mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs RoHS

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