GOFORD GT600P15MM

GOFORD · FETs & Power MOSFETs · MPN GT600P15MM

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)172nC
Current - Continuous Drain(Id)54A
Output Capacitance(Coss)270pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation276W
RDS(on)52mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 P-Channel
Input Capacitance(Ciss)6.3nF
Vgs±20V

Technical details

150V 54A 2V 276W 52mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS

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