GOFORD GT55N06D5

GOFORD · FETs & Power MOSFETs · MPN GT55N06D5

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage60V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.05nF
Vgs±20V

Technical details

N-Channel 60V 45A 69W Surface Mount DFN5x6-8L

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