GOFORD · FETs & Power MOSFETs · MPN GT52N10D5
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| Gate Charge(Qg) | 50nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 380pF |
| Current - Continuous Drain(Id) | 71A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
| Vgs | ±20V |
100V 71A 1.7V 100W 6mΩ@10V 1 N-channel N-Channel DFN-8(5.7x5.1) Single FETs, MOSFETs RoHS