GOFORD GT500P10K

GOFORD · FETs & Power MOSFETs · MPN GT500P10K

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Specifications

Gate Charge(Qg)36nC
Drain to Source Voltage100V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation98W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)45mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.861nF
Vgs±20V

Technical details

P-Channel 100V 30A Surface Mount TO-252

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