GOFORD GT400P10D5

GOFORD · FETs & Power MOSFETs · MPN GT400P10D5

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Specifications

Output Capacitance(Coss)260pF
Pd - Power Dissipation106W
Configuration-
Gate Charge(Qg)46nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)31mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.2nF

Technical details

106W 100V 35A 1.7V 31mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS

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