GOFORD GT360P20M

GOFORD · FETs & Power MOSFETs · MPN GT360P20M

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Specifications

Output Capacitance(Coss)380pF
Pd - Power Dissipation385W
Configuration-
Gate Charge(Qg)171nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)38mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)10.3nF

Technical details

385W 200V 68A 2.4V 38mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS

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