GOFORD GT2K6P15S

GOFORD · FETs & Power MOSFETs · MPN GT2K6P15S

No reviews yet — be the first to review GOFORD GT2K6P15S.

Specifications

Drain to Source Voltage150V
Gate Charge(Qg)36nC
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)210mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.4nF
Vgs±20V

Technical details

P-Channel 150V 2A 1.8W Surface Mount SOP-8

Related FETs & Power MOSFETs