GOFORD · FETs & Power MOSFETs · MPN GT2K6P15M
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| Gate Charge(Qg) | 28nC |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 58W |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 205mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.4nF |
| Vgs | ±20V |
P-Channel 150V 11A 58W Surface Mount TO-263