GOFORD GT2K2P15S

GOFORD · FETs & Power MOSFETs · MPN GT2K2P15S

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Specifications

Output Capacitance(Coss)65pF
Pd - Power Dissipation2.3W
Configuration-
Gate Charge(Qg)27nC
Drain to Source Voltage150V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)190mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.2nF

Technical details

2.3W 150V 3A 2.7V 190mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS

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