GOFORD GT2K2P15K

GOFORD · FETs & Power MOSFETs · MPN GT2K2P15K

No reviews yet — be the first to review GOFORD GT2K2P15K.

Specifications

Output Capacitance(Coss)65pF
Pd - Power Dissipation65W
Configuration-
Gate Charge(Qg)27nC
Drain to Source Voltage150V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)195mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.2nF

Technical details

65W 150V 13A 2.8V 195mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs