GOFORD GT2K0P20T

GOFORD · FETs & Power MOSFETs · MPN GT2K0P20T

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Specifications

Gate Charge(Qg)70nC
Drain to Source Voltage200V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)167mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.4nF
Vgs±20V

Technical details

P-Channel 200V 19A 138W Through Hole TO-220

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